This post is a part of a joint effort. A more simplified look at the inner workings of NAND can be found here. Introduction Flash memory technology (both NOR and NAND type) was invented by Dr. Fujio Masuoka at Toshiba in the 1980s.  NAND flash cells are a variant of the MOSFEST transistor (Image 1 below) with a floating gate added below the original control gate. The MOSFET transistor works by having the control gate dictate the flow of voltage like an on/off switch. By applying voltage to the control gate, a conductive channel can be made to appear between the source and the drain (between N+ andRead More →